4.6 Article

Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectors

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 21, Pages 5746-5753

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc01180j

Keywords

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Funding

  1. National Key R&D Program of China [2017YFA0305500]
  2. Shandong Provincial Natural Science Foundation, China [ZR2017MF037]
  3. Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20170307093131123]
  4. Qilu young scholar'' program of Shandong University
  5. National Natural Science Foundation of China [51602314, 61504151]
  6. CAS-CSIRO project of the Bureau of International Co-operation of the Chinese Academy of Sciences [122111KYSB20150064]

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The grown lead iodide (PbI2) is usually a two-dimensional sheet with a finite size which necessitates sophisticated device metallization and the growth of quasi one-dimensional materials is still challenging. In this work, large-size (length 4 100 mm), single-crystalline and high-density PbI2 nanobelts are successfully synthesized by manipulating the microenvironment in a two-step vapor deposition process at a slow heating rate of B18 1C min 1. Firstly, PbI2 nanosheet seeds are grown by physical vapor deposition, and then PbI2 nanobelts are synthesized by a self-catalyzed vapor-liquid-solid growth mechanism, which is verified by the Pb nanoparticles on the nanobelt tips. Photoluminescence and ultraviolet-visible spectra show the uniform high-quality crystallinity of the as-prepared large-size PbI2 nanobelts with a bandgap of 2.36 eV. When configured into photodetectors with a shadow mask, the fabricated device exhibits a low dark current of 4 pA, an impressive ON/ OFF current ratio of 103-104, a photoresponsivity of 13 mA W 1, and a fast response with the rise and decay time constants of 425 and 41 ms, respectively. All these performances are comparable to those of state-of-the-art layered PbI2 nanostructure photodetectors, but the ease of synthesizing large-size PbI2 nanobelts may have a useful impact on next-generation easily-fabricated high-performance optoelectronics.

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