4.6 Article

Solvent-vapor-annealed A-D-A-type semicrystalline conjugated small molecules for flexible ambipolar field-effect transistors

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 21, Pages 5698-5706

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc01547c

Keywords

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Funding

  1. National Research Foundation (NRF) of Korea [2017R1A4A1015400, 2016M1A2A2940911, 2017R1A2B2005790, 2015M1A2A2057506]
  2. National Research Foundation of Korea [2016M1A2A2940911, 2017R1A2B2005790, 2017R1A4A1015400] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This paper reports a series of acceptor-donor-acceptor (A-D-A)-type small molecules (named P3T4VCN, P3T4-RCN, and P3T4-INCN) based on an oligothiophene-phenylene core with three different electron-accepting terminal groups-dicyanovinyl (VCN), cyano-rhodanine (RCN), and cyano-indanone (INCN), respectively-for application to flexible ambipolar organic field-effect transistors (OFETs). Intrachain noncovalent coulombic interactions (via S-F and H-F interactions) were incorporated into the design of the P3T4 backbone to enhance the chain planarity. All the P3T4-based OFETs exhibited ambipolar behavior with hole-dominant transport, and the OFET performances were strongly dependent on the terminal groups. The P3T4-INCN OFET exhibited the highest carrier mobility owing to the extended p-conjugation via the INCN moiety, which enhanced the intermolecular cofacial p-p stacking and generated an efficient carrier pathway in the transistor channel. Room temperature solvent vapor annealing resulted in a dramatic increase in the carrier mobility of the OFETs without causing any damage to a polyethylene naphthalate (PEN) plastic substrate. The effects of both the terminal groups of the P3T4 small molecules and solvent vapor annealing were systematically investigated by UV-vis absorption spectroscopy, two-dimensional grazing incidence X-ray diffraction, and atomic force microscopy. In addition, a flexible OFET array with solvent-vapor-annealed P3T4-INCN was successfully fabricated on a PEN substrate. These OFET devices exhibited a hole mobility of 0.15 cm2 V1 s1, an electron mobility of 0.05 cm2 V1 s1, an on-off current ratio of B105, and excellent mechanical stability even after 300 bending cycles.

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