Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

标题
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3658-3664
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-10-10
DOI
10.1109/ted.2015.2480756

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