Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Silicon (Si) and Germanium (Ge) ultrathin body junctionless field-effect transistor (UTB-JLFET) with L-G = 1 nm and L-G = 3 nm were demonstrated by solving the coupled drift-diffusion and density-gradient model. The simulation results show that the Si and Ge channel can be used in ultrashort channel device as long as UTB is employed. As UTB is employed, ultrashort channel device does not need to follow an empirical rule of T-ch = L-G/3. Furthermore, Ge UTB-JLFET 6T-SRAM cell has reasonable static noise margin value of 149 mV. The circuit performances reveal that UTB-JLFET can be used for sub-5-nm CMOS technology nodes.