First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

Published 2015 View Full Article

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Title
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 327-329
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-02-25
DOI
10.1109/led.2015.2407193

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