Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 9, Pages 890-892Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2456914
Keywords
Bulk GaN; PN diode; avalanche; avalanche ruggedness; vertical power semiconductors
Categories
Funding
- U.S. Office of Naval Research [N122-135-0058]
- U.S. ARPA-E Switches Program
Ask authors/readers for more resources
Inductive avalanche test results presented in this letter demonstrate that GaN p-n diodes can sustain single-pulse and repetitive inductive avalanche currents. The 0.36-mm(2) vertical GaN p-n diodes can sustain single-pulse avalanche currents as high as 10 A. The safe zone of the single-pulse avalanche current is limited by peak pulse power and energy deposited in the device. The temperature-dependent behavior of the breakdown voltage and the reverse-voltage at onset of avalanche has a positive temperature coefficient. Repetitive avalanche ruggedness testing was performed by applying 10(5) pulses at 5-kHz frequency with increasing repetitive stress current. Based on a population of 63 devices, the incremental failure rate under repetitive avalanche current increases with increasing avalanche current. The devices that survive the step stress test sustain no parametric drift under repetitive avalanche.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available