Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1033-1036Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2472987
Keywords
Metal-ferroelectric-insulator-silicon field-effect transistor (MFIS-FET); Pb(Zr,Ti)O-3; ZrTiO4; nonvolatile memory
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Funding
- Brain Korea 21 Program for Leading Universities and Students through Seoul National University (SNU) Materials Division for Educating Creative Global Leaders [F15SN02D1702]
- Eui-San Research Center, Research Institute of Advanced Materials, SNU
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A novel metal-ferroelectric-insulator-silicon (MFIS) field-effect transistor (FET) with a Pt/Pb(Zr,Ti)O-3 (PZT)/ZrTiO4 (ZTO)/p-Si structure was fabricated and investigated for the first time. The PZT was formed by selectively nucleated lateral crystallization (SNLC), showing large rectangularlike grains (similar to 40 mu m) and smooth interface properties. An ultrathin ZTO layer showed a high dielectric constant (50), smooth interfaces in a ZTO/p-Si and PZT/ZTO layer, and an excellent interdiffusion barrier. From these material properties, the MFIS FET showed an excellent fatigue characteristic, which did not show any degradation in memory window (2.1 V), gate current density (10(-8) A/mu m), and fast P/E switching speed (500 ns) even after 1011 fatigue cycles. Furthermore, a long retention time, which only decreased 12.55% after 1 month and 26.97% after 10 years, was exhibited.
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