Ultra-Low Power Ni/HfO2/TiOx/TiN Resistive Random Access Memory With Sub-30-nA Reset Current

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Ultra-Low Power Ni/HfO2/TiOx/TiN Resistive Random Access Memory With Sub-30-nA Reset Current
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1018-1020
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-08-05
DOI
10.1109/led.2015.2464239

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.