Simulation of Laterally Coupled InGaZnO4-Based Electric-Double-Layer Transistors for Synaptic Electronics

Published 2015 View Full Article

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Title
Simulation of Laterally Coupled InGaZnO4-Based Electric-Double-Layer Transistors for Synaptic Electronics
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 2, Pages 204-206
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-01-07
DOI
10.1109/led.2015.2388952

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