On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective

Authors

Keywords

Journal

Volume 36, Issue 10, Pages 1040-1043

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2015-08-14

DOI

10.1109/led.2015.2467164

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