4.8 Article

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

Journal

PHYSICAL REVIEW LETTERS
Volume 120, Issue 16, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.120.167201

Keywords

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Funding

  1. ANR French National Research Agency Toprise [ANR-16-CE24-0017]
  2. Laboratoire d'excellence LANEF [ANR-10-LABX-51-01]
  3. Agence Nationale de la Recherche (ANR) [ANR-16-CE24-0017] Funding Source: Agence Nationale de la Recherche (ANR)

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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

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