XRD, SEM, XPS studies of Sb doped ZnO films and electrical properties of its based Schottky diodes

This work presents both the morphological and structural characterizations of ZnO depending on the Sb doping and the electrical characterization of ZnO based Schottky diodes grown on ITO substrates by sol gel dip coating method. In Schottky diode fabrication, undoped and Sb doped ZnO were used, which exhibit n-type and p-type behavior, respectively. For undoped and Sb doped ZnO, Pt and Al were used as a metal contact. For the surface morphology, scanning electron microscopy (SEM) has been carried out and the surface properties that play an important role on the Schottky diode performance were characterized by SEM. X-ray diffraction (XRD) measurements revealed that crystal quality got worse and crystal-lite size decreased with Sb incorporation. The presence of Sb in the ZnO was confirmed by X-ray photoelectron spectroscopy (XPS). Undoped and Sb doped ZnO based Schottky diodes were fabricated and their electrical properties were carried out in dark. The diode parameters such as ideality factor (n), barrier height (phi B) and series resistance (R-s) were systematically analyzed by using thermionic emission theory and Cheung's method. (C) 2018 Elsevier GmbH. All rights reserved.