Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain

Title
Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain
Authors
Keywords
-
Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 19, Issue 6, Pages 4855-4860
Publisher
Royal Society of Chemistry (RSC)
Online
2017-01-09
DOI
10.1039/c6cp08158d

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