Article
Materials Science, Multidisciplinary
Dahye Kim, Jiwoong Shin, Sungjun Kim
Summary: In this work, the characteristics of Ni/ZnO/n-type Si RRAM device under different compliance currents were studied, showing the best variability at higher compliance current (5 mA) and proposing the appropriate compliance current for device operation. Comprehensive evaluation of device characteristics was conducted through statistical analysis and validation.
Article
Chemistry, Physical
Aline Bastos de Paiva, Rafael Schio Wengenroth Silva, Marcio Peron Franco de Godoy, Luis Miguel Bolanos Vargas, Marcelos Lima Peres, Demetrio A. W. Soares, Victor Lopez-Richard
Summary: This study presents how the components of solid state transport in polycrystalline systems become sufficient conditions for the emergence of memory. Experimental results and a theoretical model are provided to support these findings, which have important implications for understanding and operating resistive memories.
JOURNAL OF CHEMICAL PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Harshit Sharma, Nitish Saini, Ajeet Kumar, Ritu Srivastava
Summary: This study proposes a solution-processed ternary metal chalcogenide AgBiS2 quantum dots as a functional layer in a memristive device, exhibiting electroforming-free resistive switching with low power consumption. The working mechanism involves the migration of electrochemically active Ag metal ions and sulfur vacancies to form a conductive filament. Multiple quantum conductance levels are achieved by controlling the compliance current during the set process, making this device suitable for ultra-high density multi-level memory applications with low power consumption.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Engineering, Electrical & Electronic
So-Yeon Kim, Dong-Am Park, Nam-Gyu Park
Summary: This paper reports on the resistive switching performance of a thin Cs3Bi2Br9 perovskite film enabled by synthesized Cs3Bi2Br9 powder. The synthesized powder shows improved solubility in DMSO, leading to a conformal coating on an ITO substrate. The Ag/Cs3Bi2Br9/ITO devices exhibit bipolar resistive switching behavior, with low operating voltage, high endurance, long retention time, and multilevel storage capability. The conduction mechanism is dominated by ion migration. Additionally, the devices retain their performance even after one month of storage in ambient conditions.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Multidisciplinary Sciences
Darshika Khone, Sandeep Kumar, Mohammad Balal, Sudipta Roy Barman, Sunil Kumar, Abhimanyu Singh Rana
Summary: Highly transparent resistive-switching devices were fabricated and their characteristics could be tuned by adjusting the top electrode and film thickness.
SCIENTIFIC REPORTS
(2023)
Article
Materials Science, Ceramics
Lixin Zhang, Bin Xie, Wei Chen, Lining Fan, Hui Zheng, Qiong Wu, Peng Zheng, Liang Zheng, Yang Zhang
Summary: In this study, Pt/Ni0.5Zn0.5Fe2O4/Pt (Pt/NZFO/Pt) sandwich structure material with different NZFO film thicknesses were synthesized on an Al2O3 substrate using the pulsed laser deposition method. The resistive switching characteristics of the Pt/NZFO/Pt composite films were investigated, and it was found that they exhibited excellent resistive switching behavior with adjustable set/reset voltage, large memory window, and good retention. The resistive switching mechanism was attributed to the formation and rupture of conducting path by oxygen vacancies. The thickness of the NZFO film could regulate the resistive switching behavior to meet different potential applications.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Multidisciplinary
Yu-Neng Kao, Wei-Lun Huang, Sheng-Po Chang, Wei-Chih Lai, Shoou-Jinn Chang
Summary: Different oxygen partial-pressure MgGa2O4-resistive RAMs (RRAMs) were investigated for their resistive switching behaviors. By changing the fabrication conditions of the RS layer, the resistive switching characteristics of MgGa2O4 RRAM were significantly improved. A filament model was used to explain the mechanism of conductive filament generation and rupture. The high resistance state (HRS) was explained by the formation of the interfacial layer (AlOx) and the Joule heating effect. The low resistance state (LRS) and HRS corresponded to ohmic conduction and space charge-limited conduction, respectively. The optimized fabrication parameters of Al/MgGa2O4/Pt RRAM showed favorable cycling endurance and retention time, making them suitable for nonvolatile memristors and information security applications.
Review
Crystallography
Ewelina Nowak, Edyta Chlopocka, Miroslaw Szybowicz
Summary: This paper provides an overview of the influence of various modifications on ZnO-based RRAM. It presents the motivation for creating new memory technology and explains the resistive switching mechanism, including its response to active layer and electrode selection. A comparison of ZnO devices assembled via different deposition methods is made. The manuscript also reports additional treatment of the active layer and electrodes improving the performance. Furthermore, the paper highlights the influence of different dopants on the device characteristics and reviews previous investigations of including inserting layers and nanostructures into ZnO-based RRAM.
Article
Chemistry, Analytical
Fernando Leonel Aguirre, Jordi Sune, Enrique Miranda
Summary: This paper reports the fundamentals and SPICE implementation of the Dynamic Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching (RS) devices. The DMM represents a breakthrough in accurately simulating the RS phenomenon and allows for simple setting of initial memory condition and decoupled modeling.
Article
Materials Science, Ceramics
Jian Wang, Xinyu Pei, Jianwen Zhang, Yan Li, Jianbiao Chen, Chengwei Wang
Summary: This paper successfully prepared Fe doped ZnO memristors with reversible electronic resistive switching behavior by a simple hydrothermal method. The hierarchical dual-layer nanorod array on the surface of the memristors enables reversible electrowetting-on-dielectric (EWOD) response with low energy consumption. The study found that the prepared Fe doped ZnO memristors have stable high and low resistive states with distinct surface wetting properties, which can be intelligently controlled for resistive-switching EWOD devices. This work provides a new approach for the development of excellent artificial intelligence liquid switch and devices.
CERAMICS INTERNATIONAL
(2022)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Article
Materials Science, Multidisciplinary
Shiva Lamichhane, Savita Sharma, Monika Tomar, Arijit Chowdhuri
Summary: In this study, BFO thin film samples were deposited using different laser energy levels to investigate the impact of laser energy on the resistance switching property of the films. It was found that at a specific laser energy level, a high resistance ratio was achieved between the high resistance state and low resistance state, with a stable retention period and reproducible endurance cycles. Furthermore, the study of charge transport mechanism revealed different dominating mechanisms in different voltage regions, which is important for the further application of BFO thin films in memory devices.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Wenzhong Zhang, Haruka Komatsu, Shingo Maruyama, Kenichi Kaminaga, Yuji Matsumoto
Summary: This study proposes the use of an ionic liquid crystal as a resistive switching layer in nonvolatile ReRAM devices, achieving low set voltage and stable switching behavior. The successful operation is attributed to the liquid crystal phase and the electric double layers formed at the electrode-ILC interfaces.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Inho Oh, Juyeong Pyo, Sungjun Kim
Summary: We fabricated a nonvolatile memory device with resistive switching for CMOS compatibility, suitable for the era of big data that requires high speed and capacity. By using a bi-layer formation of ZnO and TaON, the device achieves a slightly higher current level and is divided into high- and low-compliance modes. Stability and lower power consumption were observed in the low mode.
