Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon

(2015) Mohamed T. Ghoneim et al.   IEEE TRANSACTIONS ON RELIABILITY

Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

(2015) Koji Eriguchi et al.   MICROELECTRONICS RELIABILITY

Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics

(2013) Luca Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Novel degradation model of MOSFET thin gate oxide induced by VUV photons during high density plasma oxide deposition

(2012) Moojin Kim et al.   SURFACE & COATINGS TECHNOLOGY

A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology

(2010) Wu-Te Weng et al.   SOLID-STATE ELECTRONICS

Review on the reliability characterization of plasma-induced damage

(2009) Andreas Martin   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

(2008) Koji Eriguchi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS