Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

Published 2018 View Full Article

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Title
Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 2S2, Pages 02CB15
Publisher
Japan Society of Applied Physics
Online
2018-01-18
DOI
10.7567/jjap.57.02cb15

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