Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

标题
Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 2S2, Pages 02CB15
出版商
Japan Society of Applied Physics
发表日期
2018-01-18
DOI
10.7567/jjap.57.02cb15

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now