Article
Nanoscience & Nanotechnology
Kai Sun, Ming Lei, Lei Yuan, Bo Peng, Miao Yu, Xin-ming Xie, Yu-ming Zhang, Ren-xu Jia
Summary: In this paper, two sandwich structures of Ga2O3-based RRAMs were studied to understand the microscopic-level resistive switching behavior. The results showed that the oxygenation process during magnetron sputtering affected the crystallization orientation of Ga2O3 thin films. The crystalline orientation significantly affected the performance of Ga2O3-based RRAMs and provided new insights into the oxygen vacancy migration paths and associated migration energy barriers of hybrid Ga2O3 thin films.
ADVANCED COMPOSITES AND HYBRID MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Yu Zhang, Jiacheng Li, Xinman Chen, Shuxiang Wu, Ni Qin, Dinghua Bao
Summary: Au nanoparticles embedded FMO thin films were successfully fabricated and applied in Pt/Au-FMO/Pt devices, which exhibited bipolar resistive switching behavior with stable performance and excellent retention characteristics. The introduction of Au nanoparticles enhanced the local electric field, reducing the randomness of oxygen vacancy conductive filaments. The results suggest that Au-FMO films have potential in resistive random access memory devices.
Article
Chemistry, Multidisciplinary
Sergei Koveshnikov, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, Eugene Yakimov
Summary: Graphene oxide, among various graphene derivatives, is the most studied material due to its reliable and repeatable resistive switching properties. Researchers have identified three operative mechanisms responsible for this resistive switching, including metallic-like filamentary conduction, contact resistance modification, and oxidation/reduction in the bulk of graphene oxide.
Article
Engineering, Electrical & Electronic
Fang Hu, Wenjie Ming, Liu Yang, Can Huang, Hongyang Zhao, Shuhong Xie, Zhenxiang Cheng, Tingting Jia
Summary: This article investigates the resistive switching mechanism in solid solution oxides, successfully fabricating binary and ternary solid solution films with switchable polarization, weak magnetism, and reversible resistive switching effects. Multi-stage resistive switching behavior was observed, with the binary film demonstrating four resistive switching states. The dominant role of oxide vacancy/valance exchange-induced defects in the resistive switching effect of complex oxide thin films is discussed.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Article
Materials Science, Multidisciplinary
Venkata K. Perla, Sarit K. Ghosh, Kaushik Mallick
Summary: A complexation strategy was demonstrated for fabricating an organic-inorganic hybrid system using aniline as a ligand for antimony chloride complexation. The resulting organic-inorganic composite system exhibited stable high and low conduction states under LED and UV irradiation conditions, with good switching performance.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Review
Chemistry, Multidisciplinary
Emanuel Carlos, Rita Branquinho, Rodrigo Martins, Asal Kiazadeh, Elvira Fortunato
Summary: Metal oxide resistive switching memories are crucial for the requirements of the Internet of Things, and solution-based devices offer advantages such as high flexibility and low cost. These devices are emergent and promising non-volatile memories for future electronics.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Arvind Kumar, Narendra Singh, Davinder Kaur
Summary: The present study demonstrates the fabrication of an ITO/MnO2/ITO capacitor-based transparent ReRAM device. This device exhibits high transparency and stable bipolar resistive switching characteristics. It is found that the current in the low resistance state is governed by Ohmic conduction, while the high resistance state is dominated by trap-controlled space charge limited conduction mechanism. The resistive switching phenomenon in this device is attributed to the formation and rupture of conduction filament via electron trapping and de-trapping in oxygen vacancies. Reliability tests show good endurance and long retention for the MnO2-based device, making it a promising transparent electronic device for AI applications.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov, Elena S. Orlova, Sergey A. Shchanikov, Alexey N. Mikhaylov, Sungjun Kim
Summary: The electrical characteristics and resistive switching properties of memristive devices using silicon oxide and titanium nitride as the insulator and electrode materials have been studied. The as-fabricated devices do not require electroforming, but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior, where filaments form in the insulator due to the effect of traps. These devices can be easily integrated with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.
Article
Chemistry, Physical
Wanggon Lee, Shahid Iqbal, Jisu Kim, Sangmin Lee, Jinchan Lee, Mohit Kumar, Hyungtak Seo
Summary: This study successfully fabricated multiphase vanadium oxide and demonstrated its applicability as a non-volatile memory device. The multiphase vanadium oxide exhibits MIT-driven abrupt resistance switching and has high endurance and charge retention, making it a promising candidate for next-generation memory devices.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Applied
Qing Dai, Yuchen Miao, Xiaorong Qi, Zhenfu Zhao, Feiyu Zhao, Liqiang Zhu, Ziyang Hu
Summary: Ions or charged vacancies drift induced by electric fields in organic-inorganic halide perovskites contribute to resistive switching memory (RSM) devices. Two-dimensional (2D) OIHP films are used as the switching layer to fabricate RSM devices with stable and low voltage resistive switching characteristics. The addition of a NiOx hole transport layer enhances the reliability of RSM devices in atmospheric conditions.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Giuseppe Leonetti, Matteo Fretto, Fabrizio Candido Pirri, Natascia De Leo, Ilia Valov, Gianluca Milano
Summary: This study analyzes the effect of electrode metals on the resistive switching functionalities of NbOx-based memristive cells. The results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. Furthermore, Pt is the best choice for realizing memristive cells with low variability in operating voltages, resistance states, and device-to-device variability when reducing the NbOx thickness.
SCIENTIFIC REPORTS
(2023)
Article
Multidisciplinary Sciences
Darshika Khone, Sandeep Kumar, Mohammad Balal, Sudipta Roy Barman, Sunil Kumar, Abhimanyu Singh Rana
Summary: Highly transparent resistive-switching devices were fabricated and their characteristics could be tuned by adjusting the top electrode and film thickness.
SCIENTIFIC REPORTS
(2023)
Article
Nanoscience & Nanotechnology
Wenzhong Zhang, Haruka Komatsu, Shingo Maruyama, Kenichi Kaminaga, Yuji Matsumoto
Summary: This study proposes the use of an ionic liquid crystal as a resistive switching layer in nonvolatile ReRAM devices, achieving low set voltage and stable switching behavior. The successful operation is attributed to the liquid crystal phase and the electric double layers formed at the electrode-ILC interfaces.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Meng-Hung Tsai, Chia-Jung Shih, Che-Wei Chang, Yu-Tseng Chu, You-Shen Wu, Cheng-Liang Huang
Summary: In this work, we propose that the band gap of amorphous Nb2O5 thin films can be narrowed, and this concept is validated by fabricating amorphous Nb2O5 based resistive random-access memory devices. The effects of Mn dopants and temperature on the conduction mechanism of the Nb2O5-based devices are investigated, and it is demonstrated that oxygen vacancies dominate the conduction mechanism of Mn-doped Nb2O5-based devices. X-ray photoelectron spectroscopy analysis reveals that the addition of Mn promotes the oxidation of Nb, offering significant benefits for improving the performance of RRAM memory.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Computer Science, Theory & Methods
Syed Wasif Abbas Hamdani, Haider Abbas, Abdul Rehman Janjua, Waleed Bin Shahid, Muhammad Faisal Amjad, Jahanzaib Malik, Malik Hamza Murtaza, Mohammed Atiquzzaman, Abdul Waheed Khan
Summary: In recent years, there has been a significant increase in cyber threats, highlighting the need to strengthen digital infrastructure security. This article presents a detailed analysis of various cybersecurity standards and provides a comparison of frameworks, tools, and software for OS compliance testing. It also explores common software solutions that ensure compliance with cybersecurity standards. The article concludes by proposing a comprehensive set of minimum requirements for OS hardening based on the considered cybersecurity standards and discussing open research challenges.
ACM COMPUTING SURVEYS
(2022)
Article
Materials Science, Multidisciplinary
Muhammad Ismail, Haider Abbas, Chandreswar Mahata, Changhwan Choi, Sungjun Kim
Summary: This study demonstrates that the optimization of the interfacial barrier layer can improve the switching cycle endurance and uniformity of resistive random access memory (ReRAM) devices. The results show that a Ta2O5 barrier layer with a thickness of approximately 2 nm provides lower forming voltage, narrow distribution of SET-voltages, good switching cycles, high pulse endurance, long retention time, and reliable multilevel resistance states. The multilevel resistance states were scientifically investigated by modulating the compliance current and RESET-stop voltages, and were found to be distinct and stable. The ZrO2-based ReRAM device with an optimized Ta2O5 barrier layer is a promising candidate for multilevel data storage memory applications.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2022)
Article
Computer Science, Artificial Intelligence
Ramsha Saeed, Haider Abbas, Sara Asif, Saddaf Rubab, Malik M. Khan, Naima Iltaf, Shynar Mussiraliyeva
Summary: This study predicts the popularity of news articles on the internet by using the initial tweeting behavior and temporal characteristics. A deep neural network model is proposed, which outperforms existing techniques in predicting news popularity.
EXPERT SYSTEMS WITH APPLICATIONS
(2022)
Article
Materials Science, Ceramics
Quanli Hu, Bin Yue, Wang Su, Daotong Yang, Yin Wang, Xiangting Dong, Jinghai Liu
Summary: This study synthesized and investigated perovskite-type NdFeO3 and NdCoO3 nanofibers and found that NdFeO3 NFs exhibited ferromagnetic performance at 298 K and paramagnetic characteristics at low temperatures, while NdCoO3 NFs showed paramagnetic behavior. Both types of nanofibers showed favorable electrochemical performance in supercapacitors and Li-ion batteries.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Haider Abbas, Asif Ali, Jiayi Li, Thaw Tint Te Tun, Diing Shenp Ang
Summary: This work demonstrates resistive switching characteristics in conductive bridge RAM devices based on transition-metal chalcogenides, which are forming-free and self-limited. By using a suitable solid electrolyte, the proposed WTe2-based devices show excellent switching characteristics, including high pulse endurance (> 2 x 10(7) cycles) and stable data retention (10 years at 72 degrees C). The devices also exhibit good device-to-device and cycle-to-cycle uniformity, making them suitable for practical implementation in large crossbar arrays.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Asif Ali, Haider Abbas, Jiayi Li, Diing Shenp Ang
Summary: A double stacked monochalcogenide GeS-based CBRAM device with an IGZO buffer layer shows significantly improved resistive memory characteristics. The IGZO/GeS double layer provides the CBRAM with a sub-1V DC set/reset-voltage distributions (<+/- 0.1V variation). High endurance (>10(7) cycles) and retention (>10(5) s at 85 degrees C) performance are achieved. Understanding the RS mechanism based on the materials' properties and tailoring the device structure allow optimal control over variability, offering a facile means for mitigating CBRAM variability.
APPLIED PHYSICS LETTERS
(2023)
Article
Energy & Fuels
Ahmed AlZaabi, Muhammad Arif, Mujahid Ali, Ahmed Adila, Yawar Abbas, Ravi Shankar Kumar, Alireza Keshavarz, Stefan Iglauer
Summary: In this study, the wettability alteration potential of cationic surfactant CTAB and anionic surfactant SDBS on carbonate rocks and calcite mineral samples was investigated. The results showed that CTAB had a strong wettability alteration ability on the calcite surface, but increasing the surfactant concentration did not necessarily improve the wettability alteration. The wettability alteration potential of CTAB was found to be correlated with the calcite content of the carbonate sample. Additionally, the contact angles slightly increased with increasing pressure and decreased with increasing temperature. The presence of carboxylate groups tended to make the CTAB-treated surface more hydrophilic.
Article
Biochemistry & Molecular Biology
Baskar Thangaraj, Fatima Mumtaz, Yawar Abbas, Dalaver H. Anjum, Pravin Raj Solomon, Jamal Hassan
Summary: The conversion of sugarcane dry leaves into graphene oxide (GO) through pyrolysis method is a feasible and eco-friendly alternative. The synthesized GO has a sheet-like structure with various oxygen-containing functional groups. The weight ratios between carbon and oxygen in the prepared GO are examined and found to be 3.35 and 38.11.
Article
Physics, Multidisciplinary
Usman Isyaku Bature, Illani Mohd Nawi, Mohd Haris Md Khir, Furqan Zahoor, Saeed S. Ba Hashwan, Abdullah Saleh Algamili, Haider Abbas
Summary: This study analyzes the thermodynamic resistive switching mechanism and thermal energy flow in a ZnO-based RRAM stack. The influence of parameter variations on the switching characteristics is characterized. The nucleation of the filament and the growth of the gap complement the increase in the free energy of the system. These studies contribute to better understanding the thermal energy flow during dynamic switching operations and provide insights for future data storage stability.
Article
Engineering, Civil
Muhammad Asad Saleem, Xiong Li, Muhammad Faizan Ayub, Salman Shamshad, Fan Wu, Haider Abbas
Summary: The popularity of vehicles has led to the development of smart cities, making vehicular ad-hoc network (VANET) a widely used communication method for obtaining information about road conditions, speed, vehicle location, and traffic congestion. However, the security of private data in VANET is a critical task due to various security threats. In this article, a lightweight and secure privacy-preserving key agreement protocol for VANETs is proposed, which utilizes hashing technique for efficient and secure data transmission.
IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS
(2023)
Article
Chemistry, Multidisciplinary
Firdous Ahmad Deader, Yawar Abbas, Ahsanulhaq Qurashi, Mahmoud Al-Qutayri, Vincent Chan, Moh'd Rezeq
Summary: Nanoparticles bridge the gap between bulk materials and molecular/atomic counterparts, and their physical, optical, and electronic properties can be altered at the nanoscale. Attaining single monolayers of nanoparticles is crucial for improving the characteristics of semiconductor devices.
Review
Physics, Multidisciplinary
Furqan Zahoor, Mehwish Hanif, Usman Isyaku Bature, Srinivasu Bodapati, Anupam Chattopadhyay, Fawnizu Azmadi Hussin, Haider Abbas, Farhad Merchant, Faisal Bashir
Summary: The research interest in carbon nanotube field effect transistors (CNTFETs) has grown rapidly in the post Moore era due to the approaching scaling limits of conventional silicon-based CMOS devices. CNTs have been extensively studied as a promising alternative to silicon transistors, offering benefits such as minimal short channel effects, high mobility, and high normalized drive currents. This manuscript provides a detailed description of recent advances in CNTFETs, focusing on their broad applications and discussing their future prospects in the context of aggressively scaled transistor technologies.
Article
Materials Science, Multidisciplinary
Bin Yue, Quanli Hu, Wensheng Yu, Qianli Ma, Yingying Bao, Lin Li, Jinxian Wang, Guixia Liu, Xiangting Dong, Jinghai Liu
Summary: In this study, RMnO3 (R = La, Nd, Eu) perovskite-type nanofibers were prepared using electrospinning technology and utilized as anode materials for lithium-ion batteries for the first time. The crystal structure, morphology, and valence state of the nanofibers were characterized, and the influence of the synergy effect of Mn and rare-earth elements on electrochemical performance was discussed. The nanofibers displayed high initial discharge-specific capacity and maintained good capacity retention rates after high current density cycling. Additionally, simulation analysis revealed that the unit cell volume plays a role in enhancing Li+ diffusion channels and improving rate capability.
MATERIALS TODAY COMMUNICATIONS
(2023)
Review
Nanoscience & Nanotechnology
Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Bature Isyaku, Shagun Gupta, Farooq Ahmad Khanday, Anupam Chattopadhyay, Haider Abbas
Summary: The demands for new memory types in modern computing technologies are increasing. Resistive random access memory (RRAM) has emerged as a suitable candidate due to its simple structure, high performance, and potential for integration. This review focuses on the journey and device engineering of RRAM, particularly on the resistive switching mechanism, as well as its applications in neuromorphic computing.
Article
Computer Science, Information Systems
Congfeng Jiang, Yitao Qiu, Weisong Shi, Zhefeng Ge, Jiwei Wang, Shenglei Chen, Christophe Cerin, Zujie Ren, Guoyao Xu, Jiangbin Lin
Summary: This article conducts a comprehensive analysis of Alibaba's production cluster and discovers several important characteristics: daily cyclical fluctuation in workload, memory system as the performance bottleneck, batch jobs approximated as Zipf distribution, impact on co-located batch jobs with online services, and similarity in resource usage between containers and the entire cluster.
IEEE TRANSACTIONS ON CLOUD COMPUTING
(2022)
