A High-Temperature Gate Driver for Silicon Carbide mosfet

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Title
A High-Temperature Gate Driver for Silicon Carbide mosfet
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
Volume 65, Issue 3, Pages 1955-1964
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-08-26
DOI
10.1109/tie.2017.2745465

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