Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Published 2018 View Full Article

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Title
Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume -, Issue -, Pages 1-6
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-03-06
DOI
10.1109/ted.2018.2807621

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