Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume -, Issue -, Pages 1-6

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-03-06

DOI

10.1109/ted.2018.2807621

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