Improved Switching Stability and the Effect of an Internal Series Resistor in HfO₂/TiOₓ Bilayer ReRAM Cells

Published 2018 View Full Article

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Title
Improved Switching Stability and the Effect of an Internal Series Resistor in HfO₂/TiOₓ Bilayer ReRAM Cells
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume -, Issue -, Pages 1-8
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-07-07
DOI
10.1109/ted.2018.2849872

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