Improved Switching Stability and the Effect of an Internal Series Resistor in HfO₂/TiOₓ Bilayer ReRAM Cells

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume -, Issue -, Pages 1-8

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-07-07

DOI

10.1109/ted.2018.2849872

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