Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen

标题
Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO2 Gate Dielectric Annealed in Nitrogen
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 2, Pages 783-787
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-01-05
DOI
10.1109/ted.2017.2781141

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