Article
Chemistry, Physical
Luca Casanova, Mattia Arosio, Mohammad Taghi Hashemi, MariaPia Pedeferri, Gianluigi A. Botton, Marco Ormellese
Summary: High-resolution EELS was used to study the structural evolution of titanium oxide coatings obtained by PEO with different electrical parameters. It was found that cathodic current promotes the growth of a crystalline barrier layer, and a detailed mechanism regarding high frequency cathodic polarization stimulating type-B discharges was provided through optical emission spectroscopy and structural information comparison.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Xin Cui, Kaiwen Sun, Jialiang Huang, Heng Sun, Ao Wang, Xiaojie Yuan, Martin Green, Bram Hoex, Xiaojing Hao
Summary: Cu2ZnSnS4 (CZTS) solar cells are a promising photovoltaic technology due to their abundance, dry processability, and eco-friendliness. To enhance the efficiency of Cd-free CZTS devices, a ZnMgO window layer was deposited using atomic layer deposition (ALD). The deposited amorphous ZnMgO showed superior smoothness compared to high temperature ALD and comparable doping density to high-temperature thermal ALD, resulting in reduced charge carrier recombination and improved efficiency.
ACS MATERIALS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Xin Cui, Kaiwen Sun, Jialiang Huang, Heng Sun, Ao Wang, Xiaojie Yuan, Martin Green, Bram Hoex, Xiaojing Hao
Summary: Cu2ZnSnS4 (CZTS) solar cells are promising due to their abundance, dry processability, and environmental friendliness. This study demonstrates the deposition of a ZnMgO window layer using atomic layer deposition (ALD), which exhibits superior smoothness and suitable doping density. The optimized ZnMgO layer reduces charge carrier recombination and parasitic absorption, leading to improved voltage and current characteristics of the CZTS solar cell, with an efficiency of 10%.
ACS MATERIALS LETTERS
(2023)
Article
Physics, Applied
R. Dussart, R. Ettouri, J. Nos, G. Antoun, T. Tillocher, P. Lefaucheux
Summary: Cryogenic etching of a-Si, SiO2, and Si3N4 materials by CHF3/Ar inductively coupled plasma was studied in a temperature range of -140 to +20 ?. Different etching or deposition regimes were obtained on the samples depending on the experimental conditions. The selectivity of Si3N4 to the other materials was found to be infinite within a process window of -120 to -80 ?, where Si3N4 surface is etched while CFx deposition is obtained on a-Si and SiO2 surfaces. The low temperature and high self-bias conditions led to a switch in the etching selectivity between Si3N4 and the other two materials.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Armin Richter, Hemangi Patel, Christian Reichel, Jan Benick, Stefan W. Glunz
Summary: This study evaluates the effect of various plasma treatments during the ALD deposition of Al2O3/SiO2 multilayers on the passivation quality of the silicon surface. Plasma treatments after SiO2 deposition, particularly for single Al2O3/SiO2 bilayers treated with H-2 plasma, significantly improve the surface passivation quality. The improved passivation quality comes from enhanced chemical interface passivation rather than an improved field effect.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Rohit Attri, Debendra Prasad Panda, Jay Ghatak, C. N. R. Rao
Summary: In this study, NiO epitaxial thin films were successfully prepared at low temperatures using plasma-enhanced atomic layer deposition (PEALD) technique. The films exhibited excellent crystallinity and ultra-smooth surface without the need for post-annealing. Additionally, the magnetic properties of (111) oriented NiO films prepared using PEALD were explored for the first time, revealing their antiferromagnetic nature.
Article
Energy & Fuels
Xiao-Ying Zhang, Jing Han, Yao-Tian Wang, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Juan Zuo, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Hafnium oxide (HfO2) thin film is studied as a passivation layer for crystalline silicon (c-Si). The electrical characterization and measurements of HfO2 films on P-type and N-type c-Si were conducted. Post annealing in different gas ambients was performed. The results reveal the potential of HfO2 for field effect and chemical passivation. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO2 thin films are systematically studied.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Energy & Fuels
Shuya Zheng, Lu Han, Xudong Luo, Lilai Sun, Na Li, Zhibin Zhang, Xibao Li
Summary: The optimized CdS/PDA/Nafion photoanode with a multifunctional polymer passivation layer shows highly improved PEC water splitting activity and stability under visible light, providing new routes for engineering photoanodes in PEC hydrogen production devices.
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
(2022)
Article
Chemistry, Physical
Yue Zheng, Qi You, Zhentian Yin, Jian Tang, Ke Jiang, Zihao Xie, Henan Li, Cheng Han, Yumeng Shi
Summary: This study systematically investigates the contact performance of few-layer SnSe FETs by modulating the native oxide on SnSe. It is found that devices contacted with chromium demonstrate the best FET performance, achieving a negligible Schottky barrier and a low contact resistance by reducing the native oxide to Sn.
Article
Engineering, Electrical & Electronic
Jitong Zhou, Yunping Wang, Xianda Zhou, Guijun Li, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu
Summary: The study showed that the performance of amorphous indium-gallium-zinc-oxide Schottky barrier diodes significantly improved with the addition of a passivation layer, exhibiting close to ideal ideality factor, high Schottky barrier, and large current rectification ratio.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Sang Youn Chae, Yoolim Kim, Eun Duck Park, Sang Hyuk Im, Oh-Shim Joo
Summary: The application of the (Ta,Mo)(x)(O,S)(y) atomic gradient passivation layer leads to promising photocurrent and onset potential for CuInS2-based photocathodes, without the need for Pt cocatalysts. The improved electron transient time and boosted electrocatalytic activity contribute to the excellent photoelectrochemical performance of the photoelectrode.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Energy & Fuels
Xinyu Wang, Kun Gao, Dacheng Xu, Kun Li, Chunfang Xing, Xinliang Lou, Zhaojun Su, Xinbo Yang
Summary: Surface passivation is improved by using a boron oxide/aluminum oxide stack (BOx/Al2O3) on c-Si surfaces. The BOx/Al2O3 stacks show superior passivation quality compared to Al2O3 single layers after annealing. The optimized BOx/Al2O3 passivation stack achieves very low dark current densities on n-type and p-type Cz wafers, as well as boron-doped p+ emitters.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Nanoscience & Nanotechnology
Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkil, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskela, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-Driscoll
Summary: High-performance p-type oxide thin film transistors (TFTs) have great potential for semiconductor applications, but often suffer from low hole mobility and high off-state currents. By applying a thin ALD Al2O3 passivation layer on the Cu2O channel and vacuum annealing, the TFT switching characteristics can be improved. Characterization by TEM-EDX and XPS shows that Al2O3 deposition on Cu2O reduces surface and forms a CuAlO2 interfacial layer. This, along with field-effect passivation, leads to improved TFT performance by reducing trap states and electron accumulation in the off-state.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Instruments & Instrumentation
Cui Ailiang, Sun Changhong, Wang Fang, Ye Zhenhua
Summary: ZnS thin films were successfully deposited at 80℃ using ULT-ALD technique, which eliminates the damage caused by plasma and high temperature, improves interface quality, and has better electrical properties. However, the fixed charge density still needs to be reduced further.
INFRARED PHYSICS & TECHNOLOGY
(2021)
Article
Materials Science, Ceramics
Chia-Hsun Hsu, Zhi-Xuan Zhang, Pao-Hsun Huang, Wan-Yu Wu, Sin-Liang Ou, Shui-Yang Lien, Chien-Jung Huang, Ming-Kwei Lee, Wen-Zhang Zhu
Summary: In this study, SnO2 films were prepared using PEALD with TDMA-Sn as the metal source and O-2/Ar mixture as the oxidant. It was found that plasma power significantly influences the properties of the SnO2 films, with 1500 W being the optimal power. Lower and higher powers result in unwanted Sn3O4 formation and reduced film quality.
CERAMICS INTERNATIONAL
(2021)