A 4 + 2T SRAM for Searching and In-Memory Computing With 0.3-V $V_{\mathrm {DDmin}}$

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Title
A 4 + 2T SRAM for Searching and In-Memory Computing With 0.3-V $V_{\mathrm {DDmin}}$
Authors
Keywords
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Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 53, Issue 4, Pages 1006-1015
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-12-12
DOI
10.1109/jssc.2017.2776309

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