A 4 + 2T SRAM for Searching and In-Memory Computing With 0.3-V $V_{\mathrm {DDmin}}$

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 53, Issue 4, Pages 1006-1015

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-12-12

DOI

10.1109/jssc.2017.2776309

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