4.7 Article

Hybrid MZI-SOA InGaAs/InP Photonic Integrated Switches

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2017.2759278

Keywords

Integrated optics; optical switches; indium compounds

Funding

  1. U.K. EPSRC SwiTching and tRansmission (STAR) [EP/K018116/1]
  2. PARADIGM
  3. Engineering and Physical Sciences Research Council [EP/K018116/1, EP/H040536/1, EP/H022384/1, EP/M013472/1] Funding Source: researchfish
  4. EPSRC [EP/H040536/1, EP/K018116/1, EP/M013472/1, EP/H022384/1] Funding Source: UKRI

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A low-power, high-performance integrated 4 x 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm x 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switch-able SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Benes architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 x 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 x 16 switch is emulated by cascading two 4x4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.

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