Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 7, Pages 967-970Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2841028
Keywords
Transparent conductive oxide; sheet resistance; thin-film transistor; S/D electrodes
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Funding
- National Natural Science Foundation of China [U1504625, 51372069, 11404093]
- Youth Backbone Teacher Training Program in Henan Province [2017GGJS021]
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Here, we demonstrate transparent and conductive W-doped ZnO (WZO)/Cu/WZO multilayer films as source/drain (S/D) electrodes for metal-oxide thin-film transistors (TFTs). The effect of the Cu interlayer thickness on the electrical and optical properties of the films was first investigated. Optimized WZO/Cu/WZO films with an excellent sheet resistance of 4.1 Omega/sq. and an average transmittance of 81.7% in the visible range were obtained and employed as the S/D electrodes. Compared with indiumgallium- zinc oxide (IGZO) TFTs with Cu or WZO S/D electrodes, TFTs with multilayer WZO/Cu/WZO S/D electrodes exhibit much better performance with the current ON/OFF ratio, threshold voltage, subthreshold swing, and electron mobility of 10(5), 0.2 V, 0.1 V/dec, and 31.2 cm(2)/Vs, respectively. Owing to the suppression of copper diffusion and low contact resistance between IGZO and WZO/Cu/WZO multilayer films, they can be used as novel S/D electrodes for high-performance fully transparent TFTs.
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