Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory

Published 2018 View Full Article

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Title
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 6, Pages 815-818
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-05-02
DOI
10.1109/led.2018.2831708

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