Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 4, Pages 634-637Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2810272
Keywords
Hot electron transistor (HET); two-dimensional materials; van der Waals heterostructures
Categories
Funding
- NSFC [61674127, 61474099]
- ZJ-NSF [LZ17F040001]
- China State Key Project [2016YFA0200204]
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In this letter, we report the first experimental realization of purely two-dimensional-material-based hot electron transistor (2D-HET) by the van der Waals stacking. We used ultra-thin graphene as the base, and WSe2 or h-BN as the emitter-base or base-collector barriers. We quantitatively determined that the transport mechanism through the 2D barrier changes from the Fowler-Nordheim tunneling to the thermionic emission with the increase of temperature. In our 2D-HET, the dangling-bond-free 2D materials provide atomically sharp interfaces to suppress the hot electron scattering, which along with the optimization of the barriers, gives a relatively large collection efficiency of 99.95% and a relatively high current density of 233 A/cm(2) in the family of graphene-base HETs.
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