Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum

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Title
Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 2, Pages 220-223
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-12-13
DOI
10.1109/led.2017.2782693

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