GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

Published 2018 View Full Article

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Title
GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 3, Pages 417-420
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-01-26
DOI
10.1109/led.2018.2797940

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