Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 2, Pages 196-199Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2781700
Keywords
Indium-gallium-zinc oxide (IGZO); thin-film transistor; fluorination; annealing; oxidation
Categories
Funding
- Hong Kong Government [T23-713/11-1]
- Partner State Key Laboratory on Advanced Displays and Optoelectronics Technologies [ITC-PSKL12EG02]
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Both fluorination and oxidation have been employed to passivate defects in indium-gallium-zinc oxide thin-film transistors, leading to enhanced device attributes. It is presently reported that the former is more effective than the latter, requiring shorter process time (hence improved manufacturing efficiency), resulting in reduced initial defect population (hence enhanced scalability), and more robust resistance against process-and stress-induced defect generation (hence improved reliability). It is determined that the fluorine drive-in heat treatment is best conducted in an oxidizing atmosphere.
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