Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

Published 2018 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Growth and characterization of InSb on (1 0 0) Si for mid-infrared application
Authors
Keywords
Molecule beam epitaxy, Compound semiconductor, TEM, Hall measurement, Infrared photoconductor
Journal
APPLIED SURFACE SCIENCE
Volume 440, Issue -, Pages 939-945
Publisher
Elsevier BV
Online
2018-02-01
DOI
10.1016/j.apsusc.2018.01.219

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.