Growth and characterization of InSb on (1 0 0) Si for mid-infrared application

出版年份 2018 全文链接

标题

作者

关键词

Molecule beam epitaxy, Compound semiconductor, TEM, Hall measurement, Infrared photoconductor

出版物

Volume 440, Issue -, Pages 939-945

出版商

Elsevier BV

发表日期

2018-02-01

DOI

10.1016/j.apsusc.2018.01.219

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