Journal
ANALYTICAL CHEMISTRY
Volume 90, Issue 13, Pages 8123-8129Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.analchem.8b01352
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Funding
- Council of Scientific and Industrial Research (CSIR)
- MHRD
- DST, Govt. of India
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Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term confinement size used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering. Additionally, an empirical formula has been proposed using bond polarizability model for estimating the short-range order making one capable to quantify the distance of short-range order by looking at the Raman peak position alone. Both the proposals have been validated using three different data sets reported by three different research groups from a-Si samples prepared by three different methods making the analysis universal.
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