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Title
Oxide Thin-Film Electronics using All-MXene Electrical Contacts
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 30, Issue 15, Pages 1706656
Publisher
Wiley
Online
2018-02-23
DOI
10.1002/adma.201706656
References
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Note: Only part of the references are listed.- Ti3C2 MXene co-catalyst on metal sulfide photo-absorbers for enhanced visible-light photocatalytic hydrogen production
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- (2016) F. Shahzad et al. SCIENCE
- Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors
- (2016) Ji Hoon Park et al. Advanced Materials Interfaces
- Fabrication of Ti3C2TxMXene Transparent Thin Films with Tunable Optoelectronic Properties
- (2016) Kanit Hantanasirisakul et al. Advanced Electronic Materials
- Highly stable thin film transistors using multilayer channel structure
- (2015) Pradipta K. Nayak et al. APPLIED PHYSICS LETTERS
- Vibrational properties of Ti3C2 and Ti3C2T2 (T = O, F, OH) monosheets by first-principles calculations: a comparative study
- (2015) Tao Hu et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer
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- Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer
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- (2013) Jesus A. Caraveo-Frescas et al. ACS Nano
- Novel Electronic and Magnetic Properties of Two-Dimensional Transition Metal Carbides and Nitrides
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- First-order Raman scattering of the MAX phases: Ti2AlN, Ti2AlC0.5N0.5, Ti2AlC, (Ti0.5V0.5)2AlC, V2AlC, Ti3AlC2, and Ti3GeC2
- (2011) Volker Presser et al. JOURNAL OF RAMAN SPECTROSCOPY
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- (2007) D. Hong et al. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
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