Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

Title
Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer
Authors
Keywords
-
Journal
Scientific Reports
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2015-04-20
DOI
10.1038/srep09617

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