Stable p-i-n FAPbBr3 Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer
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Title
Stable p-i-n FAPbBr3
Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer
Authors
Keywords
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Journal
Advanced Materials Interfaces
Volume 4, Issue 8, Pages 1601143
Publisher
Wiley
Online
2017-02-10
DOI
10.1002/admi.201601143
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