Stable p-i-n FAPbBr3 Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer
出版年份 2017 全文链接
标题
Stable p-i-n FAPbBr3
Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer
作者
关键词
-
出版物
Advanced Materials Interfaces
Volume 4, Issue 8, Pages 1601143
出版商
Wiley
发表日期
2017-02-10
DOI
10.1002/admi.201601143
参考文献
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