Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

Title
Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis
Authors
Keywords
-
Journal
RSC Advances
Volume 7, Issue 72, Pages 45705-45713
Publisher
Royal Society of Chemistry (RSC)
Online
2017-09-28
DOI
10.1039/c7ra06903k

Ask authors/readers for more resources

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started