Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis
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Title
Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis
Authors
Keywords
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Journal
RSC Advances
Volume 7, Issue 72, Pages 45705-45713
Publisher
Royal Society of Chemistry (RSC)
Online
2017-09-28
DOI
10.1039/c7ra06903k
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