Atomic layer deposition deposited high dielectric constant (κ) ZrAlO x gate insulator enabling high performance ZnSnO thin film transistors

标题
Atomic layer deposition deposited high dielectric constant (κ) ZrAlO x gate insulator enabling high performance ZnSnO thin film transistors
作者
关键词
Atomic layer deposition, ZrAlO, x, gate insulator, ZTO TFTs, PBS stability
出版物
SUPERLATTICES AND MICROSTRUCTURES
Volume 109, Issue -, Pages 852-859
出版商
Elsevier BV
发表日期
2017-06-07
DOI
10.1016/j.spmi.2017.06.011

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