GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

标题
GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates
作者
关键词
GaN, Ultraviolet photodetectors, Quantum efficiency, Noise characteristics
出版物
SOLID-STATE ELECTRONICS
Volume 133, Issue -, Pages 78-82
出版商
Elsevier BV
发表日期
2017-05-03
DOI
10.1016/j.sse.2017.04.008

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