Journal
SMALL
Volume 13, Issue 30, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201604301
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Funding
- National Science Foundation [NSF EFMA-1542864, NSF CMMI-1619743]
- 2-DARE program [NSF EFRI-1433510]
- MRSEC Materials Preparation and Measurement Laboratory shared user facility at the University of Chicago [NSF DMR-1420709]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433510] Funding Source: National Science Foundation
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Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2-graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2-graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2-metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2-graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.
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