GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

标题
GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 9, Pages 095004
出版商
IOP Publishing
发表日期
2017-06-27
DOI
10.1088/1361-6641/aa7be3

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