Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

Published 2017 View Full Article

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Title
Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire
Authors
Keywords
Gallium nitride, Heteroepitaxy, X-ray diffraction, Raman spectroscopy, Photoluminescence, Nanoindentation
Journal
OPTICAL MATERIALS
Volume 66, Issue -, Pages 142-148
Publisher
Elsevier BV
Online
2017-02-09
DOI
10.1016/j.optmat.2017.01.053

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