Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

出版年份 2017 全文链接

标题

作者

关键词

Gallium nitride, Heteroepitaxy, X-ray diffraction, Raman spectroscopy, Photoluminescence, Nanoindentation

出版物

Volume 66, Issue -, Pages 142-148

出版商

Elsevier BV

发表日期

2017-02-09

DOI

10.1016/j.optmat.2017.01.053

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