Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

Published 2017 View Full Article

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Title
Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 28, Issue 47, Pages 475206
Publisher
IOP Publishing
Online
2017-10-02
DOI
10.1088/1361-6528/aa9054

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