Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer

标题
Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS2 light absorbing layer
作者
关键词
-
出版物
NANOTECHNOLOGY
Volume 28, Issue 47, Pages 475206
出版商
IOP Publishing
发表日期
2017-10-02
DOI
10.1088/1361-6528/aa9054

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